Role of interface roughness scattering in self-consistent resonant-tunneling-diode simulations
نویسندگان
چکیده
The effects of interface roughness scattering in a resonant-tunneling diode are examined with the selfconsistent Born and the multiple sequential scattering algorithm for various interface roughness correlation lengths. The effect of a self-consistent treatment of the scattering self-energies with the quantum charge and the electrostatic and exchange-correlation potentials is demonstrated. The effects of the scattering assisted charge and the exchange and correlation potential on the spurious bistability obtained in simulations of a symmetric resonant-tunneling diode is shown. @S0163-1829~98!05932-3#
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